PART |
Description |
Maker |
M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32,块擦除低压闪存
|
意法半导 STMicroelectronics N.V.
|
AT49LD3200-20TC AT49LD3200-13TI AT49LD3200-10TI AT |
x16/x32 Flash EEPROM x16/x32闪存EEPROM
|
Atmel, Corp. Electronic Theatre Controls, Inc.
|
K7A203200B K7A203600B-QCI14 K7A203200B-QC14 K7A203 |
64Kx36/x32 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
H57V2622GMR-60X H57V2622GMR-75X |
256Mb : x32 Dual Die Synchronous DRAM
|
Hynix Semiconductor http://
|
GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM x36 Fast Synchronous SRAM 256K x 18 128K x 32 128K x 36 4Mb Sync Burst x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
|
UPD4382361GF-A85 UPD4382321GF-A85 UPD4382361GF-A90 |
x32 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
Samsung Semiconductor Co., Ltd.
|
IS42S16800B IS42S16800B-6T IS42S81600B-6T IS42S168 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc.
|
IS61SF25616 IS61SF25616-10B IS61SF25616-10TQI IS61 |
x16 Fast Synchronous SRAM x16快速同步SRAM x18 Fast Synchronous SRAM 256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
HIROSE ELECTRIC Co., Ltd. ISSI[Integrated Silicon Solution, Inc]
|
IS61SP12832-5TQI IS61SP12836-5B IS61SP12836-5TQI I |
x32 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM
|
Electronic Theatre Controls, Inc.
|
MT48LC64M4A203 |
SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|